Samsung reveals next-gen memory with stacked HBM and 400-layer NAND

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In brief: Samsung is adding a new set of memory technologies to its AI strategy, using wafer bonding and 3D stacking to push bandwidth, density, and energy efficiency beyond what current high-bandwidth memory and NAND technologies can deliver.

At the Future of Memory and Storage 2026 conference in Santa Clara, California, the company laid out a roadmap built around three main technologies: a new Bonding V-NAND architecture with more than 400 layers, a concept for vertically stacked high-bandwidth memory called zHBM, and a next-generation NAND approach called zNAND-O. These technologies target both large-scale AI training workloads in data centers and edge AI applications that require low latency and tight power controls.

A key part of that strategyis zHBM, a new way of arranging high-bandwidth memory. In today's systems, HBM usually sits next...

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