Quantum Tunneling Transistors Could Deliver a Big Boost to Energy Efficiency in Microchips
Researchers from the Hong Kong Polytechnic University, the National University of Singapore, the Singapore University of Technology and Design, and the Hong Kong University of Science and Technology have developed a quantum-effect tunneling field-effect transistor that, they say, could deliver dramatic gains in energy efficiency for future electronics — beyond the so-called Boltzmann limit.
"By adopting quantum tunnelling, our TFET breaks through this boundary," joint project lead Jianhua Hao, head of the Hong Kong Polytechnic University's physics and materials department, of the Boltzmann limit, "paving the way for ultra-low-power, high-performance integrated circuits essential for emerging AI chips and advanced semiconductor applications."
Jianhua Hao (right) and first author Zehan Wu have demonstrated a new type of transistor, which could deliver major energy efficiency savings. (📷: Hong Kong Polytechnic University)
That adherence to Moore' law — the observation turned must-hit target by Intel cofounder Gordon Moore that the number of transistors on...
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