Details of Intel's HBM-killer memory tech emerge, revealing nine layers, up to 9GB of DRAM capacity, and almost as…
- ZAM stacks nine functional memory layers vertically inside every compact module
- Each ZAM memory layer reportedly contains exactly 1.125GB of DRAM capacity
- Estimated ZAM bandwidth figures now approach Nvidia HBM4 performance territory closely
Computer memory architecture is set to undergo a significant structural transformation in the coming years.
A new design called Zero-Angle Memory (ZAM) stacks chips vertically rather than spreading them across a flat surface, a shift that could increase data transfer speeds while lowering power consumption.
Intel has thrown its weight behind this technology as a potential replacement for existing HBM memory.
Inside the nine-layer ZAM memory design
Technical diagrams from an upcoming VLSI conference paper have now revealed the internal details of this memory design.
Eight separate DRAM storage layers sit beneath a single control layer within each ZAM module built by the consortium.
That arrangement gives every module a total of nine functional layers stacked on...
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