Chinese scientists achieve 10 billion writing cycles in major future memory endurance breakthrough that improves…
- Future memory could be more durable thanks to developments with wurtzite ferroelectrics materials
- A new structural design has enabled a demonstration of 10 billion writing cycles, around 100 times the previous limit
- The breakthrough was made by scientists from the Xidian University working with the City University of Hong Kong and Fudan University.
Next generation memory for future AI systems will need far faster and more durable performance, and scientific researchers in China seem to have made a breakthrough, demonstrating a new design which can complete some 10 billion writing cycles, 100 times more than the previous limit.
This development – by teams at the Xidian University working with the City University of Hong Kong and Fudan University – is one of the most significant breakthroughs in memory development, and relies on the discovery of a quirk in the behavior of Nitrogen atoms.
Dense, low-power memory chips now seem to...
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